High side gate driver device

ABSTRACT

The present disclosure provides a semiconductor device. The semiconductor device includes: a drift region having a first doping polarity formed in a substrate; a doped extension region formed in the drift region and having a second doping polarity opposite the first doping polarity, the doped extension region including a laterally-extending component; a dielectric structure formed over the drift region, the dielectric structure being separated from the doped extension region by a portion of the drift region; a gate structure formed over a portion of the dielectric structure and a portion of the doped extension region; and a doped isolation region having the second doping polarity, the doped isolation region at least partially surrounding the drift region and the doped extension region.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced rapidgrowth. Technological advances in IC materials and design have producedgenerations of ICs where each generation has smaller and more complexcircuits than the previous generation. However, these advances haveincreased the complexity of processing and manufacturing ICs and, forthese advances to be realized, similar developments in IC processing andmanufacturing are needed. In the course of IC evolution, functionaldensity (i.e., the number of interconnected devices per chip area) hasgenerally increased while geometry size (i.e., the smallest componentthat can be created using a fabrication process) has decreased.

These ICs include high-voltage devices, such as high side gate driver(HSGD) devices. As geometry size continues to be scaled down, it hasbecome increasingly more difficult for existing high side gate driverdevices to achieve chip area efficiency. In addition, traditionalmethods of fabricating the high side gate driver devices may involvecomplicated fabrication processes.

Therefore, while existing high side gate driver devices have beengenerally adequate for their intended purposes, they have not beenentirely satisfactory in every aspect.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a flowchart illustrating a method of fabricating a high sidegate driver device according to various aspects of the presentdisclosure.

FIGS. 2A-4A are diagrammatic fragmentary top views of a high side gatedriver device according to various aspects of the present disclosure.

FIGS. 2B-4B are diagrammatic fragmentary cross-sectional side views ofthe high side gate driver device shown in FIGS. 2A-4A according tovarious aspects of the present disclosure.

DETAILED DESCRIPTION

It is understood that the following disclosure provides many differentembodiments, or examples, for implementing different features of variousembodiments. Specific examples of components and arrangements aredescribed below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Forexample, the formation of a first feature over or on a second feature inthe description that follows may include embodiments in which the firstand second features are formed in direct contact, and may also includeembodiments in which additional features may be formed between the firstand second features, such that the first and second features may not bein direct contact. In addition, the present disclosure may repeatreference numerals and/or letters in the various examples. Thisrepetition is for the purpose of simplicity and clarity and does not initself dictate a relationship between the various embodiments and/orconfigurations discussed.

Illustrated in FIG. 1 is a flowchart of a method 20 for fabricating asemiconductor transistor device. It should be noted that additionalprocesses may be provided before, during, and after the method 20 ofFIG. 1, and that some other processes may only be briefly describedherein.

Referring to FIG. 1, the method 20 begins with block 22 in which a driftregion is formed in a semiconductor substrate. The drift region has afirst doping polarity. The method 20 continues with block 24 in which adielectric structure is formed over the drift region. The method 20continues with block 26 in which the drift region is implanted to form adoped extension region and a doped isolation region. The doped extensionregion has a portion that extends laterally toward the drift region. Thedoped extension region has a second doping polarity opposite the firstdoping polarity. The doped isolation region at least partially surroundsa portion of the drift region. The method 20 continues with block 28 inwhich a gate is formed over a portion of the dielectric structure.

FIGS. 2A-4A and 2B-4B have been simplified for a better understanding ofthe inventive concepts of the present disclosure. FIGS. 2A and 2B are adiagrammatic fragmentary top view and a diagrammatic fragmentarycross-sectional side view, respectively, of a portion of a high sidegate driver (HSGD) device according to various aspects of the presentdisclosure. FIG. 2B approximately represents the cross-sectional viewthat is seen by cutting the top view of FIG. 2A along a cutline 50(spanning from point A to A′ in FIGS. 2A and 2B). Similarly, FIGS. 3Band 4B approximately represent the cross-sectional view that is seen bycutting the top view of FIGS. 3A and 4A along a cutline 60 (spanningfrom point B to B′ in FIGS. 3A and 3B) and a cutline 70 (spanning frompoint C to C′ in FIGS. 4A and 4B), respectively. It is understood,however, that FIGS. 2A-4A and FIGS. 2B-4B are each simplified for thesake of simplicity, and FIGS. 2A-4A may not have an exact one-to-onecorrespondence with FIGS. 2B-4B.

Referring to the cross-sectional view of FIG. 2B, the high side gatedriver device includes a substrate 100. The substrate 100 is asemiconductor substrate in the present embodiment. For example, thesubstrate 100 may be a silicon substrate. The substrate 100 mayalternatively be made of some other suitable elementary semiconductor,such as diamond or germanium; a suitable compound semiconductor, such assilicon carbide, indium arsenide, or indium phosphide; or a suitablealloy semiconductor, such as silicon germanium carbide, gallium arsenicphosphide, or gallium indium phosphide.

The portion of the substrate 100 shown in FIG. 2B is doped with a P-typedopant, such as boron. In an alternative embodiment, the substrate 100may be doped with an N-type dopant, such as arsenic or phosphorous. Thesubstrate 100 may also include an epi-layer formed at the top.

Referring to FIGS. 2A and 2B, a drift region 110 is formed in thesubstrate 100. The drift region 110 is formed near an upper surface ofthe substrate 100 and has an opposite doping polarity as the substrate100. Thus, in the embodiment where the substrate 100 is P-type doped,the drift region 110 is N-type doped, and as such may be referred to asan N-drift region 110. The drift region 110 is formed by an implantationprocess (which may include one or more implantation steps) known in theart. In an embodiment, the implantation process may use phosphorous as adopant and uses an implantation dosage that is in a range between about1×10¹⁵ ions/cm² and about 5×10¹⁵ ions/cm².

A high side implant region (also referred to as a high voltage region)120 is formed in the substrate. The high side implant region 120 is alsoformed near an upper surface of the substrate 100 and has an oppositedoping polarity as the substrate 100. Thus, in the embodiment where thesubstrate 100 is P-type doped, the high side implant region 120 isN-type doped, and as such may be referred to as a high side N-region120. The high side implant region 120 is formed by an implantationprocess (which may include one or more implantation steps) known in theart. The implantation process may use an implantation dosage that isgreater than the implantation dosage used to form the drift region 100.In other words, the high side implant region 120 has a higher dopantconcentration level than the drift region 110. In an embodiment, thehigh side implant region 120 is formed by an implantation process thatuses phosphorous as a dopant and uses an implantation dosage that is ina range between about 1×10¹⁵ ions/cm² and about 1×10¹⁶ ions/cm².

As is shown in the top view of FIG. 2A, the drift region 110substantially (or at least partially) surrounds the high side implantregion 120. The high side implant region 120 has an approximatelyrectangular top view profile in FIG. 2A, and the drift region 110 has anapproximately rectangular ring-like top view profile in FIG. 2A.However, these top view profiles are merely exemplary, and it isunderstood that the high side implant region 120 and the drift region110 may each have differently-shaped top view profiles in otherembodiments.

Recall that the cross-sectional view of FIG. 2B is taken along thecutline 50 from point A to point A′, and the cutline does not overlapwith the high side implant region 120. Therefore, the high side implantregion 120 is not shown in the cross-sectional view of FIG. 2B. Across-sectional view of the high side implant region 120 will be shownin FIGS. 3B and 4B.

Still referring to FIG. 2B, a plurality of dielectric structures such asthe dielectric structure 150 is formed at the upper surface of thesubstrate 100. In one embodiment, the dielectric structure 150 includesa local oxidation of silicon (LOCOS) device. In an alternativeembodiment, the dielectric structure 150 may include a shallow trenchisolation (STI) device instead. At least a portion of the dielectricstructure 150 is formed in (or extends downwardly into) the drift region110. The dielectric structure 150 helps define boundaries of certaindoped regions to be formed later, for example boundaries of source anddrain regions. The dielectric structure 150 is not illustrated in thetop view of FIG. 2A for reasons of simplicity and clarity.

A doped extension region 160 is formed in the substrate 100. The dopedextension region 160 has the same doping polarity as the substrate 100but an opposite doping polarity as the drift region 110 or the high sideimplant region 120. Thus, in the embodiment shown, the doped extensionregion 160 has a P-type doping polarity.

The doped extension region 160 may be formed by two separate ionimplantation processes. The first ion implantation process forms a dopedregion at least partially in the upper portion of the drift region 110(near the upper surface of the drift region 110). The second ionimplantation process forms a deeper and wider doped region that“extends” or “protrudes” laterally outward. Subsequently, a thermalprocess may be performed to inter-diffuse and merge the two dopedregions into a single doped region, thereby forming the doped extensionregion 160. As a result, the doped extension region 160 has a protrudingportion 170 (or protruding tip) that laterally extends or protrudespartially into the drift region 110. As such, the doped extension region160 may also be referred to as a P-body extension region 160 herein. Asis shown in FIG. 2B, the protruding portion 170 is buried deep insidethe drift region 110, rather than being located near the upper surfaceof the drift region 110. In other words, the protruding portion 170 islocated away from the surface of the drift region 110. One benefitoffered by the protruding portion 170 is that it can provide extraconduction path to reduce an on-state resistance of a transistor.

From the top view of FIG. 2A, it can be seen that the doped extensionregion 160 partially surrounds the high side implant region 120, sincethe doped extension region 160 is formed in the drift region 110. Thedrift region 110, the doped extension region 160, and the substrate 100underneath can collectively be referred to as a high-voltage junctiontermination (HVJT) region. Thus, the HVJT region surrounds the high sideimplant region 120 in the top view as well. From the top view, the HVJThas a ring-like profile that approximately resembles a track in astadium. The track may be somewhat rectangular in some embodiments orsomewhat oval in other embodiments. The HVJT includes a P/N junctionformed by the interface between the drift region 110 and the dopedextension region 160. Thus, the HVJT includes a diode structure.

Using the same implantation processes that form the doped extensionregion 160, a doped isolation region 190 is also formed. In anembodiment, the doped isolation region 190 is formed using the secondion implantation process (the one that forms the wider and deeper dopedregion). To define the lateral size of the doped isolation region, apatterned photoresist mask layer may be formed that has an opening, andthe above-mentioned second ion implantation process may be performedthrough the opening (and through the dielectric structure 150) to definethe doped isolation region 190. Stated differently, the doped isolationregion 190 is also formed during the formation of the protruding portion170 of the doped extension region 160. Thus, the doped isolation region190 may have a dopant concentration level that is approximately the sameas the dopant concentration level of the protruding portion 170.

The doped isolation region 190 also has a ring-like top view profile. Asshown in the top view of FIG. 2A, the doped isolation region 190 atleast partially surrounds a portion of the doped extension region 160and a portion of the drift region 110. In order to differentiate thesesurrounded portions of the doped extension region and the drift regionfrom portions that are outside the doped isolation region 190, thesurrounded portion of the doped extension region is designated with thereference numeral 160A, and the surrounded portion of the drift regionis designated with the reference numeral 110A. A high-voltage transistordevice will be formed inside the area surrounded by the doped isolationregion 190. The high-voltage transistor device is a part of anultra-high voltage (UHV) level shifter device 195, which will bediscussed in more detail later.

Referring to the cross-sectional view of FIG. 2B, the doped isolationregion 190 divides the drift region 110 into two neighboring driftregions 110 and 110A. In an embodiment, the doped isolation region 190extends vertically (in a cross-sectional view) through the drift region110. In other words, the doped isolation region spans from the bottom ofthe dielectric structure 150 to the top of the substrate 100.

Still referring to the cross-sectional view of FIG. 2B, a heavily dopedregion 200 is formed at the upper surface of the doped extension region160 near the point “A”, and heavily doped regions 210-211 are formed atthe upper surface of the doped extension region 160A near the point“A′”. The heavily doped regions 200 and 210 have the same dopingpolarity as the doped extension region 160, and the heavily doped region211 has the same doping polarity as the drift region 110. Thus, in theembodiment shown in FIG. 2B, the heavily doped regions 200 and 210 areP-type doped, and the heavily doped region 211 is N-type doped. Theheavily doped regions 200 and 210 have dopant concentration levels thatare much higher than the dopant concentration level of the dopedextension region 160. The heavily doped region 211 has a dopantconcentration level that is much higher than the dopant concentrationlevel of the drift region 110. Therefore, in the embodiment shown, theheavily doped regions 200 and 210 may be referred to as P+ regions, andthe heavily doped region 211 may be referred to as an N+ region.

The heavily doped region 200 serves as a terminal for the diode of theHVJT. The heavily doped region 210 forms a guard ring that surrounds theentire high side gate driver device, as shown in the top view. Theheavily doped region 211 serves as a source region for the high voltagetransistor device mentioned above. Thus, the heavily doped region 211may also be referred to as a source region 211, and is a part of the UHVlevel shifter device 195. For reasons of simplicity and clarity, theseheavily doped regions 200 and 210-211 are not illustrated in the topview of FIG. 2A.

Referring to the top view of FIG. 2A, a drain region 230 is formed inthe area of the drift region 110A. The drain region 230 has the samedoping polarity as the source region 211 and has a dopant concentrationlevel that is similar to (or on par with) the dopant concentration levelof the source region 211. The drain region 230 serves as the drain ofthe UHV level shifter device 195. The UHV level shifter device 195 alsoincludes a gate 240. From the top view of FIG. 2A, it can be seen thatthe gate 240 is located between the doped extension region 160A and thedrain region 230. In more detail, the doped extension region 160A andthe gate 240 partially overlap in the top view, but a portion of thedrift region 110A still separates the gate 240 from the drain region230. The cross-sectional views of the gate 240 and the drain region 230are not illustrated in FIG. 2B, since they are located outside thecutline 50. The cross-sectional views of the gate 240 and the drainregion 230 are shown in FIG. 3B.

Referring now to FIG. 3B, as discussed above, the cross-sectional viewof FIG. 3B is approximately obtained by cutting the top view of FIG. 3Aalong the cutline 60 spanning from point B to point B′. Thus, FIG. 3Brepresents a different cross-sectional view than what is shown in FIG.2B, though the top views of FIGS. 2A and 3A are substantially the same.For the sake of consistency, similar components are labeled the samethroughout all the figures herein.

The cutline 60 runs through the UHV level shifter device 195, includingthe drain region 230 and the gate 240. Thus, the drain region 230 andthe gate 240 appear in the cross-sectional view of FIG. 3B. As discussedabove, the drain region 230 is a heavily doped region that has the samedoping polarity as the drift region 110 (or opposite the substrate 100).Thus, the drain region 230 is an N+ region in the embodiment shown. Thedrain region 230 is formed at the upper surface of the drift region 110and between two adjacent dielectric isolation structures 150.

The gate 240 is formed partially over the dielectric structure 150,partially over the drift region 110A, and partially over the dopedextension region 160. Stated differently, the gate 240 partiallyoverlaps with the dielectric structure 150, the drift region 110A, andthe doped extension region 160. It is understood that a high-voltagedielectric layer 250 may be formed underneath the gate 240. In oneembodiment, the high-voltage dielectric layer 250 includes siliconoxide. The high-voltage dielectric layer 250 may serve as a gatedielectric of the gate 240. When the UHV level shifter device 195 is inoperation, a conductive channel region 260 will be formed in the upperportion of the doped extension region 160A underneath this gatedielectric 250.

The gate 240 is located much closer to the source region 211 than to thedrain region 230. This is partially due to the fact that the drainregion 230 will have to handle a high voltage on the order of severalhundred volts. As such, it is desirable to move the drain region 230farther out and away from the gate 240 (and the channel 260) forelectric field considerations. As is shown in FIG. 3B, a side of thegate 240 may be substantially vertically aligned with a side of thesource region 211, while the gate 240 is separated from the drain region230 by the dielectric structure 150 and/or a significant portion of thedoped extension region 110A.

For purposes of providing an illustration, an anode 270 is also shown inthe cross-sectional view of FIG. 3B. The anode 270 is formed somewhereat an upper surface of the high side implant region 120 and is separatedor isolated from the drain region 230 by the doped isolation region 190.In reality, the anode 270 may be formed at any point of the uppersurface of the high side implant region 120. Thus, the anode 270 is notspecifically illustrated in the top view of FIG. 3A.

Referring now to FIG. 4B, a different cross-sectional view is obtainedby cutting the top view of FIG. 4A along the cutline 70. The cutline 70extends into the drain region 230, therefore the drain region 230 isshown in FIG. 4B. Also shown in FIG. 4B is that the doped isolationregion 190 isolates the drift region 110A from the high side implantregion 120.

The overall device illustrated in FIGS. 2A-4A and 2B-4B is a high sidegate driver device, which is used in high voltage operations. Theelectrical circuitry (not shown herein) of the high side gate driverwill be implemented in the high side implant region 120. The UHV levelshifter device 195 is used to push a relatively low voltage signal ontoa relatively high voltage signal to operate with the electricalcircuitry of the high side gate driver. For example, the UHV levelshifter device 195 can push a 5 volt signal onto a high voltage signalin a range between about 600 volts and about 620 volts.

In an embodiment, the source region 211 (FIG. 3B) of the UHV levelshifter device 195 is coupled to a voltage level of approximately zero.In other words, the source region 211 is grounded. The gate 240 iscoupled to a voltage level in a range from about 0 volts to about 20volts. The drain region 230 is coupled to a voltage level in a rangefrom about 0 volts to about 600 volts. The anode (shown as an example inFIG. 3B as 270 but not shown in the top views of FIGS. 2A-4A) that islocated in the high side implant region 120 is coupled to a voltagelevel in a range from about 0 volts to about 620 volts. Thus, an inputvoltage at the gate 240 may be transformed from a low voltage level ofabout 0-20 volts to a high voltage level as high as about 600 volts atthe drain 230. The HVJT region—which includes the drift region 110, thehigh side implant region 120, and the substrate 100 underneath—helps thedevice withstand such high voltage.

Although the figures discussed above illustrate a single UHV levelshifter device 195, it is understood that additional UHV level shifterdevices (that are similar to the UHV level shifter device 195) may beimplemented in the same high side gate driver device. It is alsounderstood that other fabrication processes may be performed to completethe fabrication of the high side gate driver device. For example, theseadditional fabrication processes may include forming an interlayerdielectric (ILD), forming metal layers and vias interconnecting themetal layers, performing passivation processes, packaging, and testing.For the sake of simplicity, these additional processes are notillustrated herein.

The embodiments of the present disclosure described above offeradvantages over existing high side gate driver devices. It isunderstood, however, that other embodiments may offer differentadvantages, and that no particular advantage is required for allembodiments. One advantage is reduced chip area. Many existing highvoltage devices require an external level shifter device, which wasteschip area and leads to high fabrication costs. In comparison, as shownin the top views discussed above, the UHV level shifter device 195 ofthe present disclosure is implemented “within” the HVJT region. Thisimplementation scheme saves valuable chip area and therefore reducesfabrication costs.

Another advantage is simplified fabrication processes. The HVJT regionand the UHV level shifter device 195 each contain a doped extensionregion 160/160A (the P-body extension). The protruding portion 170 ofthe doped extension region 160/160A is easy to form using the twiceimplantation technique described above. Other existing high voltage gatedrivers may have an additional doped region that is physically separatefrom the doped portion underneath the source region, which may involveextra process flow. Furthermore, in existing devices, thephysically-separate doped region may be formed close to the surface ofthe drift region, which is undesirable. In comparison, the protrudingportion 170 is buried inside the drift region 110, and is away from thesurface of the drift region 110. As mentioned previously, one benefitoffered by the protruding portion 170 is that it can provide extraconduction path to reduce an on-state resistance of the transistor thatis a part of the UHV level shifter device 195.

In addition, the doped isolation region 190 of the present disclosure isalso formed using the same processes that form the doped extensionregion 160. Hence, the UHV level shifter device 195, the HVJT region,and the doped isolation region 190 all utilize the same fabricationprocess, which simplifies fabrication process flow and saves processingtime.

One of the broader forms of the present disclosure involves asemiconductor device. The semiconductor device includes a drift regionhaving a first doping polarity formed in a substrate. The semiconductordevice includes a doped extension region formed in the drift region andhaving a second doping polarity opposite the first doping polarity. Thedoped extension region includes a laterally-extending component. Thesemiconductor device includes a dielectric structure formed over thedrift region. The dielectric structure is separated from the dopedextension region by a portion of the drift region. The semiconductordevice includes a gate structure formed over a portion of the dielectricstructure and a portion of the doped extension region. The semiconductordevice includes a doped isolation region having the second dopingpolarity. The doped isolation region at least partially surrounds thedrift region and the doped extension region.

Another one of the broader forms of the present disclosure involves asemiconductor device. The semiconductor device includes a high voltageregion having a first doping polarity formed over a substrate. Thesemiconductor device includes a drift region that at least partiallysurrounds the high voltage region. The drift region has the first dopingpolarity and a different dopant concentration level than the highvoltage region. The semiconductor device includes a doped extensionregion that at least partially surrounds the drift region. The dopedextension region has a second doping polarity opposite the first dopingpolarity. The doped extension region has a tip that protrudes into thedrift region. The semiconductor device includes a doped isolation regionthat at least partially surrounds a portion of the drift region andisolates the portion of the drift region from the high voltage region.The doped isolation region has the second doping polarity.

Yet one more of the broader forms of the present disclosure involves amethod of fabricating a semiconductor device. The method includesforming a drift region in a semiconductor substrate. The drift regionhas a first doping polarity. The method includes forming a dielectricstructure over the drift region. The method includes implanting thedrift region to form a doped extension region and a doped isolationregion. The doped extension region has a portion that extends laterallytoward the drift region. The doped extension region has a second dopingpolarity opposite the first doping polarity. The doped isolation regionat least partially surrounds a portion of the drift region. The methodincludes forming a gate over a portion of the dielectric structure.

The foregoing has outlined features of several embodiments so that thoseskilled in the art may better understand the detailed description thatfollows. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions andalterations herein without departing from the spirit and scope of thepresent disclosure. For example, the high voltage device may not belimited to an NMOS device and can be extended to a PMOS device with asimilar structure and configuration except that all doping types may bereversed and dimensions are modified according to PMOS design. Furtherembodiments may also include, but are not limited to, vertical diffusedmetal-oxide-semiconductor (VDMOS), other types of high power MOStransistors, Fin structure field effect transistors (FinFET), andstrained MOS structures.

What is claimed is:
 1. A semiconductor device, comprising: a first driftregion having a first doping polarity formed in a substrate; a dopedextension region formed in the first drift region and having a seconddoping polarity opposite the first doping polarity, the doped extensionregion including a laterally-extending component; a dielectric structureformed over the first drift region, the dielectric structure beingseparated from the doped extension region by a portion of the firstdrift region; a gate structure formed over a portion of the dielectricstructure and a portion of the doped extension region; a doped isolationregion having the second doping polarity, the doped isolation region atleast partially surrounding the first drift region and the dopedextension region; a high voltage region that is located outside thefirst drift region and the doped extension region but borders the dopedisolation region, the high voltage region having the first dopingpolarity and being more doped than the first drift region; and a seconddrift region that at least partially surrounds the high voltage regionfrom a top view, the second drift region having the first dopingpolarity and being less doped than the first drift region.
 2. Thesemiconductor device of claim 1, wherein the laterally-extendingcomponent of the doped extension region is located substantially awayfrom a surface of the first drift region.
 3. The semiconductor device ofclaim 1, further including: a drain region formed in the first driftregion, the drain region having the first doping polarity and being moredoped than the first drift region; and a source region formed in thedoped extension region, the source region having the first dopingpolarity and being more doped than the first drift region; wherein thedrain and source regions are located on opposite sides of the dielectricstructure and on opposite sides of the gate structure.
 4. Thesemiconductor device of claim 3, wherein: the drain region issubstantially spaced apart from the gate structure; and a side of thesource region is approximately vertically aligned with a side of thegate structure.
 5. The semiconductor device of claim 1, wherein the highvoltage region is operable to handle a voltage at least as high, asabout 600 volts.
 6. The semiconductor device of claim 1, wherein thedoped extension region is a first doped extension region, and furtherincluding a second doped extension region that at least partiallysurrounds the second drift region, the second doped extension regionhaving the second doping polarity and also including alaterally-extending component.
 7. The semiconductor device of claim 6,further including a guard ring region that at least partially surroundsthe second drift region and the second doped extension region, the guardring having the second doping polarity.